| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | WSON-6 |
| Rise/Fall Time | 8ns, 7ns |
| Number of Outputs | 1 Output |
| Output Current | 8 A |
| Rise Time | 9 ns |
| Fall Time | 7 ns |
| Fall Time (Max) | 11 ns |
| Fall Time (Max) | 22 ns |
| Operating Temperature (Max) | 125 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Supply Voltage | 12 V |
| Supply Voltage (Max) | 18 V |
| Supply Voltage (Min) | 4.5 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 125℃ |
The UCC27512 single-channel, high-speed, low-side gate driver device is capable of effectively driving MOSFET and IGBT power switches. Using a design that inherently minimizes shoot-through current, UCC27512 is capable of sourcing and sinking high, peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay typically 13 ns.
●The UCC27512 provides 4-A source, 8-A sink (asymmetrical drive) peak-drive current capability. Strong sink capability in asymmetrical drive boosts immunity against parasitic, Miller turn-on effect.
●UCC27512 is designed to operate over a wide VDD range of 4.5 V to 18 V and wide temperature range of 55°C to 125°C. Internal Under Voltage Lockout (UVLO) circuitry on VDD pin holds output low outside VDD operating range. The capability to operate at low voltage levels such as below 5 V, along with best in class switching characteristics, is especially suited for driving emerging wide band-gap power switching devices such as GaN power semiconductor devices.
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