| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 50 W |
| Number of Outputs | 1 Output |
| Output Current | 120 A |
| Supply Current | 0.25 mA |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.1 Ω |
| Polarity | N-Channel |
| Power Dissipation | 50 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 70 V |
| Breakdown Voltage (Drain to Source) | 70.0 V |
| Continuous Drain Current (Ids) | 5.00 A |
| Input Voltage (Max) | 18 V |
| Output Current (Max) | 7 A |
| Number of Inputs | 1 Input |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Input Voltage | 18 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 15.75 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The VNP10N07-E is a monolithic device fully auto protected Power MOSFET with ESD protection. The VNP10N07 is a monolithic device made using STMicroelectronics VIPower technology, intended for replacement of standard power MOSFETS in DC to 50kHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin.
● Thermal shutdown
● Integrated clamp
● Diagnostic feedback through input pin
● Low current drawn from input pin
ST Microelectronics
11 Pages / 0.36 MByte
ST Microelectronics
17 Pages / 0.18 MByte
ST Microelectronics
30 Pages / 0.31 MByte
ST Microelectronics
MOSFET N-CH 70V 10A TO-220
ST Microelectronics
STMICROELECTRONICS VNP10N07-E MOSFET Transistor, N Channel, 5A, 70V, 100mohm, 10V, 3V
ST Microelectronics
MOSFET N-CH 70V 10A ISOWATT-220
ST Microelectronics
MOSFET POWER 70V 10A ISOWATT220
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
