DESCRIPTION
●The VO615A consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-pin plastic dual inline package.
●The elements are mounted on one leadframe, providing a fixed distance between input and output for highest safety requirements.
●FEATURES
●• CTR offered in 9 groups
●• Isolation materials according to UL94-VO
●• Pollution degree 2 (DIN/VDE 0110/resp. IEC 60664)
●• Climatic classification 40/110/21 (IEC 60068 part 1)
●• Temperature range - 40 °C to + 110 °C
●• Rated impulse voltage (transient overvoltage) VIOTM = 8 kVpeak
●• Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV
●• Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS
●• Rated recurring peak voltage (repetitive) VIORM = 850 Vpeak
●• Creepage current resistance according to VDE 0303/ IEC 60112 comparative tracking index: CTI ≥ 175
●• Thickness through insulation ≥ 0.75 mm
●• External creepage distance > 8 mm
●APPLICATIONS
●Circuits for safe protective separation against electrical
●shock according to safety class II (reinforced isolation):
●• for appl. class I - IV at mains voltage ≤ 300 V
●• for appl. class I - IV at mains voltage ≤ 600 V according to table 1 of IEC 60664-1, suitable for:
●\- Switch-mode power supplies
●\- Line receiver
●\- Computer peripheral interface
●\- Microprocessor system interface
