| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 2.70 A |
| Case/Package | SOIC-8 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.18 Ω |
| Polarity | Dual N-Channel |
| Power Dissipation | 2.1 W |
| Threshold Voltage | 1 V |
| Drain to Source Voltage (Vds) | 60 V |
| Breakdown Voltage (Drain to Source) | 60.0 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 2.70 A |
| Rise Time | 3.5 ns |
| Input Capacitance (Ciss) | 330pF @40V(Vds) |
| Input Power (Max) | 1.25 W |
| Fall Time | 4.6 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1.8 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The ZXMN6A11DN8TA is a dual N-channel enhancement-mode MOSFET with unique structure combining the benefits of low ON-resistance and fast switching. It is ideal for DC-to-DC converter applications.
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