| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | SOT-223 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.14 Ω |
| Polarity | N-Channel |
| Power Dissipation | 3.9 W |
| Threshold Voltage | 1 V |
| Drain to Source Voltage (Vds) | 60 V |
| Continuous Drain Current (Ids) | 3.80 A |
| Operating Temperature (Max) | 150 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
The ZXMN6A11G is a 60V N-channel Enhancement Mode DMOSFET designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
● Fast switching speed
● Low gate drive
● Low input capacitance
● AEC-Q101 qualified
● UL94V-0 Flammability rating
Vishay Semiconductor
9 Pages / 0.4 MByte
Vishay Semiconductor
14 Pages / 0.5 MByte
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