TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 165 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -60.0 V |
Current Rating | -4.00 A |
Case/Package | SOT-23-3 |
Polarity | PNP |
Power Dissipation | 1560 mW |
Gain Bandwidth Product | 165 MHz |
Breakdown Voltage (Collector to Emitter) | 60 V |
Continuous Collector Current | 4A |
hFE Min | 100 @2A, 2V |
Input Power (Max) | 1.2 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | 55 ℃ |
Power Dissipation (Max) | 1560 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 3.05 mm |
Size-Width | 1.4 mm |
Size-Height | 1 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
If you require a general purpose BJT that can handle high voltages, then the PNP ZXTP2027FTA BJT, developed by Diodes Zetex, is for you. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 1560 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
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