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2SC2878ADatasheet PDF
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JIANGSU CHANGJIANG ELEC
TRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encap
sulate Transistors
2SC2878A
TRANSIST
OR (NPN)
FEATURES
z
High Emitter-Base
Voltage
z
Low
On Resistance
MAXIMUM RATINGS (T
A
=25℃ unless otherwis
e noted)
Symbol
Value Unit
V
CBO
Collector-Base
Voltage 50 V
V
CEO
Coll
ector-Emitter V
o
ltage 20 V
V
EBO
Emitter-Base Volt
age 15 V
I
C
Coll
ector Curr
e
nt -Continuous 0.3 A
P
C
Collector Pow
er Dissipation 0.4 W
T
j
Junctio
n
T
emperature 150
℃
T
stg
Storage T
emperature -55-+150
℃
ELECTRICAL CHARACTERISTICS (T
a=25℃ unless otherwise specified)
Parameter Symbol Test conditions Min Typ Max Unit
Collector
-base breakdown voltage
V
(BR)CBO
I
C
=100μA,I
E
=0 50 V
Collector
-emitter breakdown voltage
V
(BR)CEO
I
C
=1mA,I
B
=0 20 V
Emitter-bas
e breakdown voltage
V
(BR)
EBO
I
E
=100μA,I
C
=0 15 V
Collector
cut-off current
I
CBO
V
CB
=50V,I
E
=0 0.1 μA
Emitter cut-off current
I
EBO
V
EB
=15V,I
C
=0 0.1 μA
DC curren
t gain
h
FE
V
CE
=2V,
I
C
=4mA 200 120
0
Collector
-emitter saturation voltage
V
CE(sat
)
I
C
=30mA,I
B
=3mA 0.3 V
Base-emitter volt
age
V
BE(on)
V
CE
=2V,
I
C
=4mA 0.71 V
Tra
nsition frequency
f
T
V
CE
=6V,
I
C
=4mA 30 MHz
Collector
output capacitance
C
ob
V
CB
=10V,I
E
=0,f=1
MHz 7 pF
Turn-on time
t
on
160
ns
Sto
rage time t
S
500
ns
Fall time t
f
V
CC
=12V,I
C
=12mA,I
B
=1.2mA
130 ns
CLASSIFIC ATION
of h
FE
Rank
A B
Range
200-700 350-120
0
TO-9
2
1. EMITTER
2. COLLECTOR
3.
BASE
www.cj-elec.com 1 D,Mar,2016
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