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2SC2878BDatasheet PDF
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2SC2878
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC2878
For Muting and Switching Applications
High emitter-base voltage: V
EBO
= 25 V (min)
• High reverse h
FE
: Reverse h
FE
= 150 (typ.) (V
CE
= −2 V, I
C
= −4 mA)
• Low on resistance: R
ON
= 1 Ω (typ.) (I
B
= 5 mA)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics Symbol Rating Unit
Collector-base voltage V
CBO
50 V
Collector-emitter voltage V
CEO
20 V
Emitter-base voltage V
EBO
25 V
Collector current I
C
300 mA
Base current I
B
60 mA
Collector power dissipation P
C
400 mW
Junction temperature T
j
125 °C
Storage temperature range T
stg
−55~125 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current I
CBO
V
CB
= 50 V, I
E
= 0 ⎯ ⎯ 0.1 μA
Emitter cut-off current I
EBO
V
EB
= 25 V, I
C
= 0 ⎯ ⎯ 0.1 μA
DC current gain
h
FE
(Note)
V
CE
= 2 V, I
C
= 4 mA 200 ⎯ 1200
Collector-emitter saturation voltage V
CE (sat)
I
C
= 30 mA, I
B
= 3 mA ⎯ 0.042 0.1 V
Base-emitter voltage V
BE
V
CE
= 2 V, I
C
= 4 mA ⎯ 0.61 ⎯ V
Transition frequency f
T
V
CE
= 6 V, I
C
= 4 mA ⎯ 30 ⎯ MHz
Collector output capacitance C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz ⎯ 4.8 7 pF
Turn-on time t
on
⎯ 160 ⎯
Storage time t
stg
⎯ 500 ⎯
Switching time
Fall time t
f
Duty cycle
<
=
2%
⎯ 130 ⎯
ns
Note: h
FE
classification A: 200~700, B: 350~1200
Unit: mm
JEDEC TO-92
JEITA SC-43
TOSHIBA 2-5F1B
Weight: 0.21 g (typ.)
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