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2SC2878-ADatasheet PDF
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66
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1386/A)
Application : Audio and General Purpose
LAPT
2SC3519/3519A
IC
–
VCE Characteristics
(Typical)
hFE
–
IC Characteristics
(Typical)
hFE
–
IC
Temperature Characteristics (Typical)
θj-a
–
t Characteristics
IC
–
VBE Temperature Characteristics
(Typical)
VCE(sat)
–
IB Characteristics
(Typical)
Pc
–
Ta Derating
Safe Operating Area (Single Pulse)
fT
–
IE Characteristics
(Typical)
0
3
2
1
0 0.2 0.4 0.6 1.00.8
Base Current I
B(A)
Collector-Emitter Saturation Voltage VCE(sat)(V)
IC=10A
5A
0
15
10
5
021
Base-Emittor Voltage V
BE(V)
Collector Current IC(A)
(VCE=4V)
125˚C (Case Temp)
25˚C
–30˚C (Case Temp)
0.1
1
3
0.5
1 10 100 1000 2000
Time t(ms)
Transient Thermal Resistance θj-a(˚C/W)
130
100
50
3.5
0
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
With Infinite heatsink
Without Heatsink
0 25 50 75 100 125 150
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
5 10 50 100 200
0.1
0.05
1
0.5
10
40
5
10ms
Without Heatsink
Natural Cooling
1.2SC3519
2.2SC3519A
1
2
DC
0.02 0.1 1 100.5 5 15
10
50
100
300
Collector Current IC(A)
DC Current Gain hFE
(VCE=4V)
Typ
0
0
15
10
5
2134
Collector-Emitter Voltage V
CE(V)
Collector Current IC(A)
400mA
500mA
600mA
300mA
200mA
100mA
50mA
I
B
=20mA
700mA
(VCE=4V)
Collector Current I
C(A)
0.02 0.5 1 5 100.1 15
DC Current Gain hFE
10
50
100
300
125˚C
25˚C
–30˚C
–0.02 –0.1 –1 –5 –10
0
40
60
20
80
Cut-off Frequency fT(MHZ)
(VCE=12V)
Emitter Current IE(A)
Typ
■Typical Switching Characteristics (Common Emitter)
V
CC
(V)
40
RL
(Ω)
4
I
C
(A)
10
V
BB2
(V)
–5
I
B2
(A)
–1
t
on
(
µ
s)
0.2typ
t
stg
(
µ
s)
1.3typ
tf
(
µ
s)
0.45typ
I
B1
(A)
1
VBB1
(V)
10
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
T
stg
5
15
4
130(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
Unit
µ
A
V
µ
A
V
V
MHz
pF
(Ta=25°C)
(Ta=25°C)
2SC3519A
180
180
2SC3519
160
160
100max
50min∗
2.0
max
50typ
250typ
External Dimensions MT-100(TO3P)
15.6
±0.4
9.6
19.9
±0.3
4.0 2.0
5.0
±0.2
1.8
ø3.2
±0.1
2
3
1.05
+0.2
-0.1
20.0min
4.0max
BE
5.45
±0.1
5.45
±0.1
C
4.8
±0.2
0.65
+0.2
-0.1
1.4
2.0
±0.1
a
b
Weight : Approx 6.0g
a. Type No.
b. Lot No.
∗h
FE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
100max
2SC3519A
180
180
min
Conditions
V
CB=
V
EB=5V
I
C=25mA
V
CE=4V, IC=5A
I
C=5A, IB=0.5A
V
CE=12V, IE=–2A
V
CB=10V, f=1MHz
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
2SC3519
160
160
min
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