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November 2013
FQP30N06 — N-Channel QFET
®
MOSFET
©2000 Fairchild Semiconductor Corporation
FQP30N06 Rev. C1
www.fairchildsemi.com
1
FQP30N06
Description
This N-Channel enhancement mode power MOSFET is pro-
duced using Fairchild Semiconductor’s proprietary planar stripe
and DMOS technology. This advanced MOSFET technology has
been especially tailored to reduce on-state resistance, and to
provide superior switching performance and high avalanche en-
ergy strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and variable
switching power applications.
Features
• 30 A, 60 V, R
DS(on)
= 40 mΩ (Max.) @ V
GS
= 10 V,
I
D
= 15 A
• Low Gate Charge (Typ. 19 nC)
• Low Crss (Typ. 40 pF)
• 100% Avalanche Tested
•175°C Maximum Junction Temperature Rating
TO-220
G
D
S
G
S
D
N-Channel QFET
®
MOSFET
60 V, 30 A, 40 mΩ
Absolute Maximum Ratings T
C
= 25°C unless otherwise noted.
Thermal Characteristics
Symbol Parameter FQP30N06 Unit
V
DSS
Drain-Source Voltage 60 V
I
D
Drain Current
- Continuous (T
C
= 25°C)
30 A
- Continuous (T
C
= 100°C)
21.3 A
I
DM
Drain Current - Pulsed
(Note 1)
120 A
V
GSS
Gate-Source Voltage ± 25 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
280 mJ
I
AR
Avalanche Current
(Note 1)
30 A
E
AR
Repetitive Avalanche Energy
(Note 1)
7.9 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
7.0 V/ns
P
D
Power Dissipation (T
C
= 25°C)
79 W
- Derate above 25°C 0.53 W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +175 °C
T
L
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 seconds
300 °C
Symbol Parameter FQP30N06 Unit
R
θJC
Thermal Resistance, Junction-to-Case, Max. 1.90 °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient, Max. 62.5 °C/W
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