Part Datasheet Search > MOSFETs > Fairchild > FQP30N06L Datasheet PDF > FQP30N06L Datasheet Pages 1/8
FQP30N06L Datasheet - Fairchild
| Manufacturer: | Fairchild |
| Category: | MOSFETs |
| Case Package: | TO-220-3 |
| Description: | Trans MOSFET N-CH 60V 32A 3Pin(3+Tab) TO-220AB Tube |
| Pictures: |
FQP30N06LDatasheet PDF
Page:
of 8 Go
If the format of the manual is confusing, please download and read the original PDF file.
November 2013
FQP30N06L — N-Channel QFET
®
MOSFET
©2001 Fairchild Semiconductor Corporation
FQP30N06L Rev. C1
www.fairchildsemi.com
1
FQP30N06L
N-Channel QFET
®
MOSFET
60 V, 32 A, 35 mΩ
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
audio amplifier, DC motor control, and variable switching
power applications.
Features
• 32 A, 60 V, R
DS(on)
= 35 mΩ (Max.) @ V
GS
= 10 V,
I
D
= 16 A
• Low Gate Charge (Typ. 15 nC)
• Low Crss (Typ. 50 pF)
• 100% Avalanche Tested
• 175°C Maximum Junction Temperature Rating
TO-220
G
D
S
G
S
D
Absolute Maximum Ratings T
C
= 25°C unless otherwise noted.
Thermal Characteristics
Symbol Parameter FQP30N06L Unit
V
DSS
Drain-Source Voltage 60 V
I
D
Drain Current
- Continuous (T
C
= 25°C)
32 A
- Continuous (T
C
= 100°C)
22.6 A
I
DM
Drain Current - Pulsed
(Note 1)
128 A
V
GSS
Gate-Source Voltage ± 20 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
350 mJ
I
AR
Avalanche Current
(Note 1)
32 A
E
AR
Repetitive Avalanche Energy
(Note 1)
7.9 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
7.0 V/ns
P
D
Power Dissipation (T
C
= 25°C)
79 W
- Derate above 25°C 0.53 W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +175 °C
T
L
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 seconds
300 °C
Symbol Parameter FQP30N06L Unit
R
θJC
Thermal Resistance, Junction-to-Case, Max. 1.90 °C/W
R
θJA
Thermal Resistance, Junction-to-Ambient, Max. 62.5 °C/W
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.