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FQP30N06 N-Channel QFET
®
MOSFET
March 2013
©2003 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FQP30N06 Rev.C0
FQP30N06
N-Channel QFET
®
MOSFET
60 V, 30 A, 40 m
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor
®
’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
audio amplifier, DC motor control, and variable switching
power applications.
Features
• 30 A, 60 V, R
DS(on)
= 40 m (Max.) @ V
GS
= 10 V,
I
D
= 15 A
• Low Gate Charge (Typ.19 nC)
• Low Crss (Typ. 40 pF)
• 100% Avalanche Tested
• 175C Maximum Junction Temperature Rating
Absolute Maximum Ratings T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol Parameter FQP30N06 Unit
V
DSS
Drain-Source Voltage 60 V
I
D
Drain Current
- Continuous (T
C
= 25°C)
30 A
- Continuous (T
C
= 100°C)
21.3 A
I
DM
Drain Current - Pulsed
(Note 1)
120 A
V
GSS
Gate-Source Voltage 25 V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
280 mJ
I
AR
Avalanche Current
(Note 1)
30 A
E
AR
Repetitive Avalanche Energy
(Note 1)
7.9 mJ
dv/dt Peak Diode Recovery dv/dt
(Note 3)
7.0 V/ns
P
D
Power Dissipation (T
C
= 25°C)
79 W
- Derate above 25°C 0.53 W/°C
T
J
, T
STG
Operating and Storage Temperature Range -55 to +175 °C
T
L
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300 °C
Symbol Parameter FQP30N06 Unit
R
JC
Thermal Resistance, Junction-to-Case, Max. 1.90 °C/W
R
CS
Thermal Resistance, Case-to-Sink, Typ. 0.5 °C/W
R
JA
Thermal Resistance, Junction-to-Ambient, Max. 62.5 °C/W
S
D
G
S
D
G
TO-220
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