| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-205 |
| Number of Positions | 3 Position |
| Polarity | PNP, P-Channel |
| Power Dissipation | 3 W |
| Breakdown Voltage (Collector to Emitter) | 60.0 V |
| hFE Min | 100 |
| DC Current Gain (hFE) | 50 |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
The 2N2905A from Multicomp is a through hole, silicon planar PNP transistors in TO-19 metal can package. This transistor features fast switching, short turn off and low saturation voltage hence the device is most suitable for switching and amplification.
● Collector emitter voltage (Vce) of -60V
● Continuous collector current (Ic) of -600mA
● Power dissipation of 600mW
● Operating junction temperature range from -65°C to 200°C
● Collector emitter saturation voltage of -400mV at Ic=150mA
● DC current gain is greater than 50 at Ic=500mA
Multicomp
2 Pages / 0.13 MByte
Multicomp
8 Pages / 0.71 MByte
Motorola
Bipolar Transistors - BJT PNP Transistor
Microsemi
Trans GP BJT PNP 40V 0.6A 3Pin TO-39
Multicomp
MULTICOMP 2N2905 Bipolar (BJT) Single Transistor, High Speed Switching, PNP, 40V, 200MHz, 3W, 600mA, 100 hFE
ST Microelectronics
GENERAL PURPOSE AMPLIFIERS AND SWITCHESo
Central Semiconductor
Trans GP BJT PNP 40V 0.6A 3Pin TO-39 Box
CDIL
Transistor: PNP; bipolar; 60V; 600mA; 0.6/3W; TO39
ON Semiconductor
60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-5
Raytheon
GB PNP Medium Current General Purpose Amplifier and Switches
Solid State
Transistor; PNP; -60V; -600mA; TO-39
NXP
TRANSISTOR 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39, METAL PACKAGE-3, BIP General Purpose Small Signal
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
