| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 300 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 160 V |
| Current Rating | 600 mA |
| Case/Package | TO-92-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 625 mW |
| Breakdown Voltage (Collector to Emitter) | 160 V |
| Thermal Resistance | 83.3℃/W (RθJC) |
| Continuous Collector Current | 0.6A |
| hFE Min | 80 @10mA, 5V |
| Input Power (Max) | 625 mW |
| DC Current Gain (hFE) | 100 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 625 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Material | Silicon |
| Size-Length | 5.2 mm |
| Size-Width | 4.19 mm |
| Size-Height | 5.33 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The 2N5551G is a small signal high voltage NPN silicon Bipolar Transistor, designed for general purpose switching applications.
● 200°C/W Junction-to-ambient thermal resistance
● 83.3°C/W Junction-to-case thermal resistance
ON Semiconductor
6 Pages / 0.08 MByte
ON Semiconductor
11 Pages / 0.39 MByte
ON Semiconductor
3 Pages / 0.05 MByte
ON Semiconductor
13 Pages / 0.34 MByte
ON Semiconductor
1 Pages / 0.07 MByte
ON Semiconductor
1 Pages / 0.16 MByte
ON Semiconductor
Trans GP BJT NPN 160V 0.6A 3Pin TO-92 Bulk
Fairchild
Trans GP BJT NPN 160V 0.6A 3Pin TO-92
Diotec Semiconductor
Transistor: bipolar, NPN; 160V; 600mA; 625mW; TO92
Multicomp
MULTICOMP 2N5551 Bipolar (BJT) Single Transistor, NPN, 160V, 300MHz, 625mW, 600mA, 80 hFE
先科ST
NPN Vceo=160V Ic=600mA hfe=30 fT=300MHz P=625mW
ST Microelectronics
NPN,Vceo=160V,Ic=600mA,hfe=30~250
Taitron
160V NPN General Purpose Transistor in TO-92, RoHS
Central Semiconductor
Trans Npn 160V 0.6A To-92
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
