| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0064 Ω |
| Polarity | N-Channel |
| Power Dissipation | 179 W |
| Threshold Voltage | 2.7 V |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 100A |
| Rise Time | 7.2 ns |
| Input Capacitance (Ciss) | 3870pF @50V(Vds) |
| Input Power (Max) | 214 W |
| Fall Time | 4.1 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 214W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 10.67 mm |
| Size-Width | 4.7 mm |
| Size-Height | 16.51 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The CSD19531KCS is a NexFET™ N-channel Power MOSFET designed to minimize losses in power conversion applications It is suitable for use in secondary-side synchronous rectifier and hot-swap telecom applications.
● Ultra-low Qg and Qgd
● Low thermal resistance
● Avalanche rated
● Halogen-free
● Plastic package
● -55 to 175°C Operating junction temperature range
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