| TYPE | DESCRIPTION |
|---|
| Number of Pins | 8 Pin |
| Case/Package | 483BK |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.0011 Ω |
| Power Dissipation | 3.3 W |
| Threshold Voltage | 1.4 V |
| Drain to Source Voltage (Vds) | 25 V |
| Rise Time | 8 ns |
| Input Capacitance (Ciss) | 5118pF @13V(Vds) |
| Fall Time | 7 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3300 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
The FDMS8558SDC is a SyncFET™ N-channel MOSFET produced using Fairchild Semiconductor"s advanced PowerTrench® process. Advancements in both silicon and package technologies have been combined to offer the lowest RDS (ON) while maintaining excellent switching performance by extremely low junction-to-ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode. It is suitable as synchronous rectifier for DC-to-DC converters and high end server/workstation Vcore low side.
● Dual Cool™ package
● High performance technology for extremely low RDS (ON)
ON Semiconductor
5 Pages / 1.04 MByte
Fairchild
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FAIRCHILD SEMICONDUCTOR FDMS8558SDC MOSFET Transistor, N Channel, 90A, 25V, 0.0011Ω, 10V, 1.4V
ON Semiconductor
Trans MOSFET N-CH Si 25V 38A 8Pin Power 56 T/R
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