| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.092 Ω |
| Power Dissipation | 0.5 W |
| Threshold Voltage | 2.1 V |
| Input Capacitance | 145 pF |
| Drain to Source Voltage (Vds) | 30 V |
| Rise Time | 8 ns |
| Input Capacitance (Ciss) | 145pF @15V(Vds) |
| Input Power (Max) | 460 mW |
| Fall Time | 2 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 460 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 1.4 mm |
| Size-Width | 2.92 mm |
| Size-Height | 0.94 mm |
The FDN361BN is a N-channel Logic Level MOSFET produced using Fairchild Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance. It is particularly suited for low voltage applications in PCMCIA cards and other battery powered circuits where fast switching and low in-line power loss are needed in a very small outline surface-mount package. It comes with industry standard outline SOT-23 surface-mount package using proprietary SuperSOT™-3 design for superior thermal and electrical capabilities.
● Low gate charge
● High performance Trench technology for extremely low RDS (ON)
ON Semiconductor
5 Pages / 0.12 MByte
ON Semiconductor
9 Pages / 0.6 MByte
Fairchild
N-Channel/ Logic Level/ PowerTrench
Fairchild
MOSFET Transistor, N Channel, 1.4A, 30V, 0.092Ω, 10V, 2.1V
Fairchild
MOSFET N-CH 30V 1.8A SSOT-3
ON Semiconductor
MOSFET Transistor, N Channel, 1.4A, 30V, 0.092Ω, 10V, 2.1V
ON Semiconductor
MOSFET N-CH 30V 1.8A SSOT-3
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