| TYPE | DESCRIPTION |
|---|
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Drain to Source Resistance (on) (Rds) | 0.004 Ω |
| Power Dissipation | 310 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 75 V |
| Rise Time | 88 ns |
| Input Capacitance (Ciss) | 6600pF @25V(Vds) |
| Input Power (Max) | 310 W |
| Fall Time | 45 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 310000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Rail, Tube |
The FDP047AN08A0 is a N-channel MOSFET produced using Fairchild Semiconductor"s PowerTrench® process. It is suitable for use in synchronous rectification for ATX/server/telecom PSU, battery protection circuit and uninterruptible power supplies.
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