| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0178 Ω |
| Polarity | N-Channel |
| Power Dissipation | 36 W |
| Threshold Voltage | 1.7 V |
| Drain to Source Voltage (Vds) | 60 V |
| Continuous Drain Current (Ids) | 30A |
| Rise Time | 3 ns |
| Input Capacitance (Ciss) | 1600pF @30V(Vds) |
| Input Power (Max) | 36 W |
| Fall Time | 3 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 36W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.41 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
Thanks to Infineon Technologies, both your amplification and switching needs can be taken care of with one component: the IPD220N06L3GBTMA1 power MOSFET. Its maximum power dissipation is 36000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.
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