| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.4 Ω |
| Polarity | N-Channel |
| Power Dissipation | 650 W |
| Threshold Voltage | 5 V |
| Drain to Source Voltage (Vds) | 800 V |
| Breakdown Voltage (Drain to Source) | 800 V |
| Continuous Drain Current (Ids) | 24.0 A |
| Rise Time | 27 ns |
| Input Capacitance (Ciss) | 7200pF @25V(Vds) |
| Fall Time | 24 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 650W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 16.26 mm |
| Size-Width | 5.3 mm |
| Size-Height | 21.46 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IXFH24N80P is a PolarHV™ HiPerFET N-channel enhancement-mode Power MOSFET features avalanche rated and fast intrinsic diode.
● Unclamped inductive switching (UIS) rated
● International standard package
● Low package inductance
● Easy to mount
● Space savings
● High power density
IXYS Semiconductor
4 Pages / 0.15 MByte
IXYS Semiconductor
1 Pages / 0.37 MByte
IXYS Semiconductor
IXYS SEMICONDUCTOR IXFH24N80P Power MOSFET, N Channel, 24A, 800V, 400mohm, 10V, 5V
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