| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 100 MHz |
| Number of Pins | 6 Pin |
| Voltage Rating (DC) | -12.0 V |
| Current Rating | -3.00 A |
| Case/Package | SC-70-6 |
| Halogen Free Status | Halogen Free |
| Number of Positions | 6 Position |
| Polarity | PNP |
| Power Dissipation | 450 mW |
| Breakdown Voltage (Collector to Emitter) | 12 V |
| Continuous Collector Current | 2A |
| hFE Min | 100 @800mA, 1.5V |
| Input Power (Max) | 450 mW |
| DC Current Gain (hFE) | 180 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 650 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 2 mm |
| Size-Width | 1.25 mm |
| Size-Height | 0.9 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
ON Semiconductor brings you the solution to your high-voltage BJT needs with their PNP NSL12AWT1G general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 650 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 12 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
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