| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Power Rating | 2.5 W |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 0.13 Ω |
| Polarity | P-Channel |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 3 V |
| Input Capacitance | 870 pF |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30 V |
| Continuous Drain Current (Ids) | 4.6A |
| Rise Time | 21 ns |
| Input Capacitance (Ciss) | 870pF @10V(Vds) |
| Input Power (Max) | 2.5 W |
| Fall Time | 71 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 2.5W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 5 mm |
| Size-Width | 3.9 mm |
| Size-Height | 1.75 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Benefits:
● RoHS Compliant
● Low RDS(on)
● Industry-leading quality
● Dynamic dv/dt Rating
● Fast Switching
● Fully Avalanche Rated
● 175°C Operating Temperature
● P-Channel MOSFET
Infineon
9 Pages / 0.27 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
27 Pages / 0.31 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
1 Pages / 0.13 MByte
International Rectifier
Trans MOSFET P-CH 30V 4.6A 8Pin SOIC
International Rectifier
MOSFET, Power; P-Ch; VDSS -30V; RDS(ON) 0.07Ω; ID -4.6A; SO-8; PD 2.5W; VGS +/-20V
International Rectifier
Trans MOSFET P-CH 30V 4.6A 8Pin SOIC Tube
International Rectifier
Trans MOSFET P-CH 30V 4.6A 8Pin SOIC T/R
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