| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 15 Pin |
| Case/Package | Direct-FET |
| Power Rating | 125 W |
| Number of Positions | 15 Position |
| Drain to Source Resistance (on) (Rds) | 0.009 Ω |
| Polarity | N-Channel |
| Power Dissipation | 125 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 6660 pF |
| Drain to Source Voltage (Vds) | 150 V |
| Continuous Drain Current (Ids) | 67A |
| Rise Time | 19 ns |
| Input Capacitance (Ciss) | 6660pF @25V(Vds) |
| Fall Time | 12 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3.3W (Ta), 125W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
Benefits:
● RoHS Compliant
● Qualified Industrial
● Qualified MSL1
● Low Profile (less than 0.7 mm)
● Dual Sided Cooling
● Optimized for Synchronous Rectification
● Low Conduction Losses
● High Cdv/dt Immunity
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A 150V Single N-Channel HEXFET Power MOSFET in a DirectFET MP package rated at 11 amperes optimized with low on resistance.
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