TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | SOIC-8 |
Power Rating | 2.5 W |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 0.025 Ω |
Polarity | P-CH |
Power Dissipation | 2.5 W |
Drain to Source Voltage (Vds) | 40 V |
Continuous Drain Current (Ids) | 6.2A |
Rise Time | 280 ns |
Input Capacitance (Ciss) | 3220pF @25V(Vds) |
Input Power (Max) | 2.5 W |
Fall Time | 100 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 2.5W (Ta) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Size-Length | 5 mm |
Size-Width | 4 mm |
Size-Height | 1.5 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRF7241TRPBF is a HEXFET® single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the ruggedized device design, provides an extremely efficient and reliable operation for use in battery and load management application.
● Trench technology
● Ultra-low ON-resistance
● Industry standard pin-out
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