| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Power Rating | 52 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.105 Ω |
| Polarity | N-CH |
| Power Dissipation | 79 W |
| Threshold Voltage | 2 V |
| Input Capacitance | 800 pF |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Continuous Drain Current (Ids) | 17A |
| Rise Time | 53 ns |
| Input Capacitance (Ciss) | 800pF @25V(Vds) |
| Input Power (Max) | 79 W |
| Fall Time | 26 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 79W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.39 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRLR3410TRPBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device for use in a wide variety of applications. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques.
● Logic level gate drive
● Advanced process technology
● Fully avalanche rating
● Dynamic dV/dt rating
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International Rectifier
Trans MOSFET N-CH 100V 17A 3Pin(2+Tab) DPAK
International Rectifier
Trans MOSFET N-CH 100V 17A 3Pin(2+Tab) DPAK T/R
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.105Ω; ID 17A; D-Pak (TO-252AA); PD 79W
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.105Ω; ID 17A; D-Pak (TO-252AA); PD 79W
International Rectifier
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.105Ω; ID 17A; D-Pak (TO-252AA); PD 79W
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