| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | Micro-8 |
| Power Rating | 1.8 W |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.075 Ω |
| Polarity | P-Channel |
| Power Dissipation | 1.8 W |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 3.6A |
| Rise Time | 20 ns |
| Input Capacitance (Ciss) | 520pF @25V(Vds) |
| Input Power (Max) | 1.8 W |
| Fall Time | 39 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1.8W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 3 mm |
| Size-Width | 3 mm |
| Size-Height | 0.86 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Benefits:
● RoHS Compliant
● Low RDS(on)
● Industry-leading quality
● Dynamic dv/dt Rating
● Fast Switching
● Fully Avalanche Rated
● 175°C Operating Temperature
● P-Channel MOSFET
Infineon
7 Pages / 0.17 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
11 Pages / 0.26 MByte
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2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
3 Pages / 0.14 MByte
International Rectifier
-30V Single P-Channel HEXFET Power MOSFET in a Micro 8 package
IRF
Power MOSFET(Vdss=-30V, Rds(on)=0.09Ω)
International Rectifier
Trans MOSFET P-CH 30V 3.6A 8Pin Micro T/R
International Rectifier
MOSFET P-CH 30V 3.6A MICRO8
IRF
MOSFET P-CH 30V 3.6A MICRO8
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