TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Power Rating | 200 W |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.003 Ω |
Polarity | N-Channel |
Power Dissipation | 200 W |
Threshold Voltage | 2.5 V |
Input Capacitance | 5890 pF |
Drain to Source Voltage (Vds) | 30 V |
Continuous Drain Current (Ids) | 260A |
Rise Time | 160 ns |
Input Capacitance (Ciss) | 5890pF @15V(Vds) |
Input Power (Max) | 330 W |
Fall Time | 57 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 330W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.66 mm |
Size-Width | 4.82 mm |
Size-Height | 16.51 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRL3713PBF is a HEXFET® N-channel Power MOSFET offers fully characterized avalanche voltage and current. It is suitable for high frequency isolated DC-to-DC converter with synchronous rectification for telecom use.
● Ultra-low gate impedance
● Very low static drain-to-source ON-resistance at 4.5V gate-to-source voltage
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