TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-247-3 |
Power Rating | 227 W |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.04 Ω |
Polarity | N-Channel |
Power Dissipation | 227 W |
Threshold Voltage | 3.5 V |
Drain to Source Voltage (Vds) | 650 V |
Breakdown Voltage (Drain to Source) | 650 V |
Continuous Drain Current (Ids) | 46A |
Rise Time | 14 ns |
Input Capacitance (Ciss) | 4340pF @400V(Vds) |
Input Power (Max) | 227 W |
Fall Time | 7 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 227W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 16.13 mm |
Size-Width | 5.21 mm |
Size-Height | 21.1 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IPW65R045C7 is a 650V N-channel CoolMOS™ Power MOSFET providing the world"s lowest RDS (on) with low switching losses and efficiency improvements over the full load range. The new CoolMOS™ C7 series offers a ~50% reduction in turn-off losses (Eoss) compared to the CoolMOS™ CP, offering a GaN-like level of performance in PFC, TTF and other hard-switching topologies. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems. The latest state-of-the-art generation of high voltage power MOSFETs makes AC-DC power supplies more efficient, more compact, lighter and cooler than ever before.
● Reduced energy stored in output capacitance (Eoss)
● Lower gate charge
● Space-saving through reduction of parts
● Improved safety margin
● Lowest conduction losses
● Low switching losses
● Better light load efficiency
● Increasing power density
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15 Pages / 1.95 MByte
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