TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Case/Package | SOIC-8 |
Power Rating | 2.5 W |
Number of Channels | 1 Channel |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 0.0094 Ω |
Polarity | N-Channel |
Power Dissipation | 97 mW |
Part Family | IRF7855 |
Threshold Voltage | 4.9 V |
Input Capacitance | 1560pF @25V |
Drain to Source Voltage (Vds) | 60 V |
Breakdown Voltage (Drain to Source) | 60 V |
Continuous Drain Current (Ids) | 12.0 A |
Rise Time | 13 ns |
Input Capacitance (Ciss) | 1560pF @25V(Vds) |
Fall Time | 12 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 2500 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 5 mm |
Size-Width | 4 mm |
Size-Height | 1.5 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IRF7855PBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for primary side switch in bridge topology in isolated DC-to-DC converters, primary side switch in push-pull topology for 18 to 36Vin isolated DC-to-DC converters, secondary side synchronous rectification switch for 15Vout and 48V non-isolated synchronous buck DC-to-DC applications.
● Fully characterized capacitance including effective COSS to simplify design
● Fully characterized avalanche voltage and current
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