| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Current Rating | 44.0 A |
| Case/Package | TO-263-3 |
| Power Rating | 320 W |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 0.054 Ω |
| Polarity | N-Channel |
| Power Dissipation | 320 W |
| Threshold Voltage | 5 V |
| Input Capacitance | 2900 pF |
| Drain to Source Voltage (Vds) | 200 V |
| Breakdown Voltage (Drain to Source) | 200 V |
| Continuous Drain Current (Ids) | 38A |
| Rise Time | 95 ns |
| Input Capacitance (Ciss) | 2900pF @25V(Vds) |
| Fall Time | 47 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3.8W (Ta), 300W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10.67 mm |
| Size-Width | 9.65 mm |
| Size-Height | 4.83 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFS38N20DTRLP is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters and plasma display panel.
● Fully characterized capacitance including effective COSS to simplify design
● Fully characterized avalanche voltage and current
Infineon
11 Pages / 0.32 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
12 Pages / 0.56 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
International Rectifier
Trans MOSFET N-CH 200V 38A 3Pin(2+Tab) D2PAK
International Rectifier
Trans MOSFET N-CH 200V 38A 3Pin(2+Tab) D2PAK T/R
International Rectifier
MOSFET 200V 1 N-CH HEXFET 54mOhms 60NC
International Rectifier
Trans MOSFET N-CH 200V 38A 3Pin(2+Tab) D2PAK
International Rectifier
Trans MOSFET N-CH 200V 38A 3Pin(2+Tab) D2PAK T/R
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
