| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Power Rating | 69 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.019 Ω |
| Polarity | N-Channel |
| Power Dissipation | 107 W |
| Threshold Voltage | 1 V |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 55A |
| Rise Time | 210 ns |
| Reverse recovery time | 81 ns |
| Maximum Forward Voltage (Max) | 1.3 V |
| Input Capacitance (Ciss) | 1600pF @25V(Vds) |
| Input Power (Max) | 107 W |
| Fall Time | 54 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Junction Temperature | -55℃ ~ 175℃ |
| Power Dissipation (Max) | 107W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.39 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
Benefits:
● RoHS Compliant
● Low RDS(on)
● Industry-leading quality
● Dynamic dv/dt Rating
● Fast Switching
● Fully Avalanche Rated
● 175°C Operating Temperature
● Logic Level
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International Rectifier
Single N-Channel 30V 107W 50NC Hexfet Power Mosfet Surface Mount - TO-252AA
IRF
Power MOSFET(Vdss=30V, Rds(on)=0.019Ω, Id=46A)
International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.019Ω; ID 55A; D-Pak (TO-252AA); PD 107W
International Rectifier
Trans MOSFET N-CH 30V 55A 3Pin(2+Tab) DPAK Tube
International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.019Ω; ID 55A; D-Pak (TO-252AA); PD 107W
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