| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Power Rating | 110 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.295 Ω |
| Polarity | P-Channel |
| Power Dissipation | 110 W |
| Input Capacitance | 860 pF |
| Drain to Source Voltage (Vds) | 150 V |
| Continuous Drain Current (Ids) | 13A |
| Rise Time | 36 ns |
| Input Capacitance (Ciss) | 860pF @25V(Vds) |
| Fall Time | 37 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 110W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.39 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFR6215PBF is a -150V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET is well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapour phase, infrared or wave soldering techniques.
● Advanced process technology
● Fully avalanche rated
● 175°C Operating temperature
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International Rectifier
Trans MOSFET P-CH 150V 13A 3Pin(2+Tab) DPAK
International Rectifier
Trans MOSFET P-CH 150V 13A 3Pin(2+Tab) DPAK T/R
International Rectifier
MOSFET, Power; P-Ch; VDSS -150V; RDS(ON) 0.295Ω; ID -13A; D-Pak (TO-252AA); PD 110W
International Rectifier
MOSFET, Power; P-Ch; VDSS -150V; RDS(ON) 0.295Ω; ID -13A; D-Pak (TO-252AA); PD 110W
International Rectifier
MOSFET, Power; P-Ch; VDSS -150V; RDS(ON) 0.295Ω; ID -13A; D-Pak (TO-252AA); PD 110W
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