| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Power Rating | 143 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0068 Ω |
| Polarity | N-Channel |
| Power Dissipation | 143 W |
| Threshold Voltage | 2.5 V |
| Drain to Source Voltage (Vds) | 60 V |
| Continuous Drain Current (Ids) | 99A |
| Rise Time | 216 ns |
| Reverse recovery time | 27 ns |
| Maximum Forward Voltage (Max) | 1.3 V |
| Input Capacitance (Ciss) | 3779pF @50V(Vds) |
| Fall Time | 96 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Junction Temperature | -55℃ ~ 175℃ |
| Power Dissipation (Max) | 143W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRLR3636PBF is a 60V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for DC motor drive, high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.
● Optimized for logic level drive
● Very low RDS (ON) at 4.5V VGS
● Superior R
●Q at 4.5V VGS
● Improved gate, avalanche and dynamic dv/dt ruggedness
● Fully characterized capacitance and avalanche SOA
● Enhanced body diode dV/dt and dI/dt capability
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