| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | SOT-227-4 |
| Number of Positions | 4 Position |
| Polarity | N-Channel |
| Power Dissipation | 450 W |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Input Capacitance (Cies) | 3.3nF @25V |
| Input Power (Max) | 450 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 450 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 38.2 mm |
| Size-Width | 25.07 mm |
| Size-Height | 9.6 mm |
| Operating Temperature | -40℃ ~ 150℃ (TJ) |
Don"t be afraid to step up the amps in your device when using this IXDN55N120D1 IGBT transistor from Ixys Corporation. Its maximum power dissipation is 450000 mW. It has a maximum collector emitter voltage of 1200 V. It is made in a single dual emitter configuration. This IGBT transistor has an operating temperature range of -40 °C to 150 °C.
IXYS Semiconductor
4 Pages / 0.07 MByte
IXYS Semiconductor
5 Pages / 0.07 MByte
IXYS Semiconductor
1200V high voltage IGBT with optional diode
IXYS Semiconductor
Trans IGBT Chip N-CH 1200V 100A 450000mW 4Pin SOT-227B
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