| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 7 Pin |
| Case/Package | Direct-FET |
| Power Rating | 100 W |
| Number of Positions | 5 Position |
| Drain to Source Resistance (on) (Rds) | 1.7 mΩ |
| Polarity | N-CH |
| Power Dissipation | 100 W |
| Threshold Voltage | 1.8 V |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 28A |
| Rise Time | 22 ns |
| Input Capacitance (Ciss) | 4700pF @15V(Vds) |
| Input Power (Max) | 2.8 W |
| Fall Time | 13 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 2.8W (Ta), 100W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Operating Temperature | -40℃ ~ 150℃ (TJ) |
N-Channel 30V 28A (Ta), 170A (Tc) 2.8W (Ta), 100W (Tc) Surface Mount DIRECTFET™ MX
Infineon
9 Pages / 0.25 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
44 Pages / 3.69 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
5 Pages / 0.11 MByte
International Rectifier
Trans MOSFET N-CH 30V 28A 7Pin Direct-FET MX T/R
International Rectifier
Trans MOSFET N-CH 30V 28A 7Pin Direct-FET MX T/R
International Rectifier
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 28 amperes optimized with low on resistance.
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