TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 100 V |
Current Rating | 28.0 A |
Case/Package | TO-3-3 |
Power Rating | 195 W |
Polarity | N-Channel |
Power Dissipation | 195 W |
Rise Time | 50.0 ns |
Breakdown Voltage (Collector to Emitter) | 600 V |
Reverse recovery time | 95 ns |
Input Power (Max) | 195 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 195000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Obsolete |
Packaging | Tube |
Size-Length | 15.8 mm |
Size-Width | 5 mm |
Size-Height | 18.9 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Fairchild
8 Pages / 0.66 MByte
Fairchild
9 Pages / 0.88 MByte
Fairchild
FAIRCHILD SEMICONDUCTOR SGH80N60UFDTU IGBT Single Transistor, 80A, 2.6V, 195W, 600V, TO-3P, 3Pins
Fairchild
Trans IGBT Chip N-CH 600V 80A 3Pin(3+Tab) TO-3PN Rail
ON Semiconductor
Trans IGBT Chip N-CH 600V 80A 195000mW 3Pin(3+Tab) TO-3PN Rail
ON Semiconductor
Trans IGBT Chip N-CH 600V 80A 195000mW 3Pin(3+Tab) TO-3PN Rail
Fairchild
Trans IGBT Chip N-CH 600V 80A 3Pin (3+Tab) TO-3PN
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