| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 25 W |
| Number of Positions | 3 Position |
| Polarity | N-Channel |
| Power Dissipation | 25 W |
| Rise Time | 250 ns |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Input Power (Max) | 25 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 25000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 9.3 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
This fast-switching STGF7NB60SL IGBT transistor from STMicroelectronics will be perfect in your circuit. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 25000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
ST Microelectronics
9 Pages / 0.24 MByte
ST Microelectronics
20 Pages / 2.6 MByte
ST Microelectronics
Trans IGBT Chip N-CH 600V 15A 25000mW 3Pin(3+Tab) TO-220FP Tube
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