| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-264-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 10 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 800 W |
| Threshold Voltage | 5 V |
| Drain to Source Voltage (Vds) | 150 V |
| Continuous Drain Current (Ids) | 180 A |
| Rise Time | 32 ns |
| Reverse recovery time | 150 ns |
| Input Capacitance (Ciss) | 7000pF @25V(Vds) |
| Input Power (Max) | 800 W |
| Fall Time | 36 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 800W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IXTK180N15P is a Polar™ single N-channel enhancement-mode standard Power MOSFET offers low reduced static drain-to-source ON-resistance and high power density.
● International standard packages
● Avalanche rating
● Low package inductance
● Fast intrinsic diode
● Dynamic dV/dt rating
● Low Qg
● Easy to mount
● Space saving
IXYS Semiconductor
5 Pages / 0.16 MByte
IXYS Semiconductor
5 Pages / 0.11 MByte
IXYS Semiconductor
6 Pages / 1.89 MByte
IXYS Semiconductor
Trans MOSFET N-CH 100V 180A 3Pin(3+Tab) TO-264
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