| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | 80.0 V |
| Current Rating | 4.00 A |
| Case/Package | TO-225-3 |
| Polarity | N-Channel |
| Power Dissipation | 40.0 W |
| Breakdown Voltage (Collector to Emitter) | 80.0 V |
| Continuous Collector Current | 4A |
| hFE Min | 750 |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Bulk |
| Minimum Packing Quantity | 500 |
The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJE700, MJE702, MJE703 (PNP); and MJE800, MJE802, MJE803 (NPN) are complementary devices.
●Features
●---
● |
● High DC Current Gain -
●hFE = 2000 (Typ) @ IC = 2.0 Adc
● Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplication
● Choice of Packages -
●MJE700 and MJE800 series
● Pb-Free Packages are Available
ON Semiconductor
8 Pages / 0.25 MByte
ON Semiconductor
6 Pages / 0.16 MByte
ON Semiconductor
2 Pages / 0.03 MByte
ON Semiconductor
6 Pages / 0.13 MByte
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