MRF586 Datasheet PDF - Microsemi

Manufacturer:	Microsemi
Category:	BJTs
Case Package:	TO-205
Description:	NPN 1W 17V 1GHz Through Hole RF Microwave Discrete Transistor - TO-39
Documentation:	MRF586 Datasheet (4 Pages)
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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MRF586 Specifications

TYPE	DESCRIPTION
Mounting Style	Through Hole
Frequency	3000 MHz
Number of Pins	3 Pin
Case/Package	TO-205
Power Dissipation	1 W
Breakdown Voltage (Collector to Emitter)	17 V
Gain	13.5 dB
hFE Min	40 @50mA, 5V
Input Power (Max)	1 W
Power Dissipation (Max)	1000 mW

Microsemi

4 Pages / 0.29 MByte

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