| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 200 V |
| Current Rating | 32.0 A |
| Case/Package | TO-247-3 |
| Drain to Source Resistance (on) (Rds) | 0.075 Ω |
| Polarity | N-Channel |
| Power Dissipation | 180 W |
| Input Capacitance | 3600pF @25V |
| Drain to Source Voltage (Vds) | 200 V |
| Breakdown Voltage (Drain to Source) | 200 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 32.0 A |
| Rise Time | 120 ns |
| Input Capacitance (Ciss) | 5000pF @25V(Vds) |
| Fall Time | 91 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 180W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Bulk |
| Size-Length | 16.26 mm |
| Size-Width | 5.3 mm |
| Size-Height | 21.08 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Power MOSFET, TO-247 Package Type, NChannel,150°C (Max.)
● Avalanche Energy Specified
● Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
● Diode is Characterized for Use in Bridge Circuits
● IDSS and VDS (on) Specified at Elevated Temperature
● Isolated Mounting Hole
ON Semiconductor
7 Pages / 0.12 MByte
ON Semiconductor
10 Pages / 0.15 MByte
ON Semiconductor
TRIAC, Power MOSFET; TO-247; 600V; N; 200VDC; 200VDC; 50mA (Max.); 32A
Motorola
TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075Ω
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