| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-18-3 |
| Power Dissipation | 0.5 W |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| hFE Min | 100 @150mA, 10V |
| Input Power (Max) | 500 mW |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tray |
| Material | Silicon |
| Operating Temperature | -65℃ ~ 200℃ (TJ) |
Bipolar (BJT) Transistor NPN 50V 800mA 500mW Through Hole TO-18 (TO-206AA)
Microsemi
6 Pages / 0.13 MByte
Microsemi
Trans GP BJT NPN 50V 0.8A 3Pin TO-18
Microsemi
Trans GP BJT NPN 50V 0.8A 3Pin UB
Semicoa Semiconductor
Trans GP BJT NPN 50V 0.8A 3Pin TO-18
Microsemi
Trans GP BJT NPN 50V 0.8A 3Pin UB T/R
Microsemi
Trans GP BJT NPN 50V 0.8A 4Pin UA
Microsemi
Trans GP BJT NPN 50V 0.8A 3Pin TO-18
Semicoa Semiconductor
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1Element, NPN, Silicon, HERMETIC SEALED, CERAMIC, CERSOT-3
Semicoa Semiconductor
Small Signal Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, CERAMIC PACKAGE-3
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