| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220F-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.16 Ω |
| Polarity | N-Channel |
| Power Dissipation | 39 W |
| Threshold Voltage | 2.5 V |
| Drain to Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Ids) | 20.6A |
| Rise Time | 38 ns |
| Input Capacitance (Ciss) | 3175pF @25V(Vds) |
| Input Power (Max) | 39 W |
| Fall Time | 40 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 39W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.36 mm |
| Size-Width | 4.9 mm |
| Size-Height | 9.19 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FCPF190N60E is a N-channel SuperFET® II high voltage super-junction MOSFET utilizes advanced charge-balance technology for outstandingly low ON-state resistance and lower gate charge. This advanced MOSFET is tailored not only to minimize conduction loss but also to achieve superior switching performance. Besides these advantages, it also provides extremely higher dV/dt rate and bigger avalanche energy than conventional super-junction MOSFETs. SuperFET II MOSFET is suitable for various switching power applications aiming for system miniaturization and higher efficiency.
● Ultra low gate charge (Qg = 57nC)
● Low effective output capacitance (Coss.eff = 160pF)
● 100% avalanche tested
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