| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.075 Ω |
| Polarity | N-Channel |
| Power Dissipation | 255 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Ids) | 35A |
| Rise Time | 40 ns |
| Input Capacitance (Ciss) | 4300pF @50V(Vds) |
| Input Power (Max) | 255 W |
| Fall Time | 50 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 255W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.75 mm |
| Size-Width | 5.15 mm |
| Size-Height | 20.15 mm |
| Operating Temperature | 150℃ (TJ) |
The STW43NM60ND is a FDmesh™ N-channel Power MOSFET features low input capacitance and gate charge. The FDmesh™ II is belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company"s strip layout and associates all advantages of reduced ON-resistance and fast switching with an intrinsic fast recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.
● The worldwide best RDS (ON) area amongst the fast recovery diode device
● 100% Avalanche tested
● Low gate input resistance
● Extremely high dV/dt and avalanche capabilities
ST Microelectronics
13 Pages / 0.54 MByte
ST Microelectronics
14 Pages / 0.53 MByte
ST Microelectronics
32 Pages / 0.51 MByte
ST Microelectronics
Trans MOSFET N-CH 600V 35A 3Pin(3+Tab) TO-247 Tube
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