| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | XDFN-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.034 Ω |
| Polarity | N-Channel |
| Power Dissipation | 400 mW |
| Threshold Voltage | 650 mV |
| Drain to Source Voltage (Vds) | 12 V |
| Continuous Drain Current (Ids) | 3.2A |
| Input Capacitance (Ciss) | 556pF @10V(Vds) |
| Operating Temperature (Max) | 150 ℃ |
| Power Dissipation (Max) | 400mW (Ta), 8.33W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The PMXB40UNE is a N-channel enhancement-mode FET in a leadless ultra-small surface-mount plastic package using Trench MOSFET technology. It is suitable for use in high-side load switch and charging switch for portable devices, power management in battery driven portables, LED driver and DC-to-DC converter applications.
● Leadless ultra small and ultra thin SMD plastic package
● Exposed drain pad for excellent thermal conduction
● 1.5kV ESD protection HBM
● 34mR Very low Drain-Source ON-state resistance RDS (ON)
● Very low threshold voltage of 0.65V for portable applications
● -55 to 150°C Junction temperature range
Nexperia
MOSFET N-CH 12V 3.2A DFN1010D-3G
Nexperia
MOSFET N-CH 12V 3.2A 3DFN
NXP
PMXB40UNE - 12V, single N-channel Trench MOSFET
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
