| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Supply Voltage (DC) | 1.80V (min) |
| Case/Package | SOT-23-6 |
| Number of Outputs | 1 Output |
| Input Voltage (DC) | 3.80 V |
| Output Voltage | 1.2V ~ 6.5V |
| Output Current | 3 A |
| Number of Positions | 6 Position |
| Power Dissipation | 400 mW |
| Quiescent Current | 20.0 µA |
| Number of Regulated Outputs | 1 Output |
| Switching Frequency | 350 kHz |
| Thermal Shutdown | No |
| Topology | Buck |
| Duty Cycle | 100 % |
| Input Voltage (Max) | 6.5 V |
| Input Voltage (Min) | 1.8 V |
| Output Voltage (Max) | 6.5 V |
| Output Voltage (Min) | 1.2 V |
| Output Current (Max) | 3 A |
| Maximum Duty Cycle | 1 |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 400 mW |
| Supply Voltage | 1.8V ~ 6.5V |
| Supply Voltage (Max) | 6.5 V |
| Supply Voltage (Min) | 1.8 V |
| Input Voltage | 1.8V ~ 6.5V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.9 mm |
| Size-Width | 1.6 mm |
| Size-Height | 1.15 mm |
| Operating Temperature | -40℃ ~ 85℃ |
The TPS64200DBVT is an non-synchronous Step-Down Controller ideally suited for systems powered from a 5 or 3.3V bus or for applications powered from a 1-cell Li-Ion battery or from a 2- to 4-cell NiCd, NiMH, or alkaline battery. This step-down controller drives an external P-channel MOSFET allowing design flexibility. To achieve highest efficiency over a wide load current range, this controller uses a minimum on time, minimum off time control scheme and consumes only 20µA quiescent current.
● Step-down controller for applications with up to 95% efficiency
● High efficiency over a wide load current range
● Internal soft-start
● 20µA Typical quiescent current
● Overcurrent protected
● Green product and no Sb/Br
●Device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
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