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FQP30N06L Datasheet - ON Semiconductor
| Manufacturer: | ON Semiconductor |
| Category: | MOSFETs |
| Case Package: | TO-220-3 |
| Description: | Trans MOSFET N-CH 60V 32A 3Pin(3+Tab) TO-220AB Tube |
| Pictures: |
FQP30N06LDatasheet PDF
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FQP30N06L — N-Channel QFET
®
MOSFET
©2001 Fairchild Semiconductor Corporation
FQP30N06L Rev. C1
www.fairchildsemi.com
2
Package Marking and Ordering Information
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FQP30N06L FQP30N06L TO-220 Tube N/A N/A 50 units
Electrical Characteristics T
C
= 25°C unless otherwise noted.
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 400 μH, I
AS
= 32 A, V
DD
= 25 V, R
G
= 25 Ω, starting T
J
= 25°C.
3. I
SD
≤ 32 A, di/dt ≤ 300 A/us, V
DD
≤ BV
DSS,
starting T
J
= 25°C.
4.Essentially independent of operating temperature.
Symbol Parameter Test Conditions Min Typ Max Unit
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250 μA
60 -- -- V
ΔBV
DSS
/ ΔT
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 μA, Referenced to 25°C
-- 0.06 -- V/°C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 60 V, V
GS
= 0 V
-- -- 1 μA
V
DS
= 48 V, T
C
= 150°C
-- -- 10 μA
I
GSSF
Gate-Body Leakage Current, Forward
V
GS
= 20 V, V
DS
= 0 V
-- -- 100 nA
I
GSSR
Gate-Body Leakage Current, Reverse
V
GS
= -20 V, V
DS
= 0 V
-- -- -100 nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
1.0 -- 2.5 V
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10 V, I
D
= 16 A
V
GS
= 5 V, I
D
=16 A
--
--
0.027
0.035
0.035
0.045
Ω
g
FS
Forward Transconductance
V
DS
= 25 V, I
D
= 16 A
-- 24 -- S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
-- 800 1040 pF
C
oss
Output Capacitance -- 270 350 pF
C
rss
Reverse Transfer Capacitance -- 50 65 pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= 30 V, I
D
= 16 A,
R
G
= 25 Ω
(Note 4)
-- 15 40 ns
t
r
Turn-On Rise Time -- 210 430 ns
t
d(off)
Turn-Off Delay Time -- 60 130 ns
t
f
Turn-Off Fall Time -- 110 230 ns
Q
g
Total Gate Charge
V
DS
= 48 V, I
D
= 32 A,
V
GS
= 5 V
(Note 4)
-- 15 20 nC
Q
gs
Gate-Source Charge -- 3.5 -- nC
Q
gd
Gate-Drain Charge -- 8.5 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current -- -- 32 A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current -- -- 128 A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 32 A
-- -- 1.5 V
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
S
= 32 A,
dI
F
/ dt = 100 A/μs
-- 60 -- ns
Q
rr
Reverse Recovery Charge -- 90 -- nC
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