| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Power Rating | 110 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.026 Ω |
| Polarity | N-Channel |
| Power Dissipation | 110 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 2400pF @25V |
| Drain to Source Voltage (Vds) | 75 V |
| Breakdown Voltage (Drain to Source) | 75 V |
| Continuous Drain Current (Ids) | 42A |
| Rise Time | 90 ns |
| Input Capacitance (Ciss) | 2400pF @25V(Vds) |
| Input Power (Max) | 110 W |
| Fall Time | 66 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 110W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.39 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IRFR2407PBF is a HEXFET® seventh generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation level up to 1.5W is possible in typical surface-mount applications.
● Advanced process technology
● Dynamic dV/dt rating
● Fast switching
● Fully avalanche rating
● Low static drain-to-source ON-resistance
Infineon
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270 Pages / 11.59 MByte
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International Rectifier
Trans MOSFET N-CH 75V 42A 3Pin(2+Tab) DPAK
International Rectifier
Trans MOSFET N-CH 75V 42A 3Pin(2+Tab) DPAK T/R
International Rectifier
MOSFET, Power; N-Ch; VDSS 75V; RDS(ON) 0.0218Ω; ID 42A; D-Pak (TO-252AA); PD 110W
International Rectifier
MOSFET, Power; N-Ch; VDSS 75V; RDS(ON) 0.0218Ω; ID 42A; D-Pak (TO-252AA); PD 110W
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