| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0095 Ω |
| Polarity | N-Channel |
| Power Dissipation | 99 W |
| Threshold Voltage | 3.7 V |
| Drain to Source Voltage (Vds) | 75 V |
| Continuous Drain Current (Ids) | 59A |
| Rise Time | 30 ns |
| Input Capacitance (Ciss) | 3107pF @25V(Vds) |
| Fall Time | 21 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 99W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.39 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
Benefits:
● Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
● Fully Characterized Capacitance and Avalanche SOA
● Enhanced body diode dV/dt and dI/dt Capability
● Lead-Free, RoHS Compliant
● StrongIRFET™
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