NTD4909NT4G Datasheet PDF - ON Semiconductor

Manufacturer:	ON Semiconductor
Category:	MOSFETs
Case Package:	TO-252-3
Description:	DPAK N-CH 30V 12.1A
Documentation:	NTD4909NT4G Datasheet (8 Pages)Pinout Diagram on1 PageHot Package Outline Dimension on7 Page 8 Page Package Footprint Pad Layout on8 Page Part Numbering System on1 Page 3 Page 8 Page NTD4909NT4G Application Note (7 Pages)
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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NTD4909NT4G Specifications

TYPE	DESCRIPTION
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	8 mΩ
Polarity	N-Channel
Power Dissipation	1.37 W
Threshold Voltage	1.7 V
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Drain to Source)	30 V
Continuous Drain Current (Ids)	12.1A
Input Capacitance (Ciss)	1314pF @15V(Vds)
Input Power (Max)	1.37 W
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1.37W (Ta), 29.4W (Tc)